Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm
3D Stacked FETGate-All-Around (GAA)nanosheet channelsepitaxial growthMiddle Dielectric Isolation (MDI)transistor architecturesemiconductor manufacturing.
Author: its_ajseven
Date: 6/19/2026
Article Summary:
This article discusses the demonstration of a 3D Stacked FET with a gate pitch of 42 nm, featuring triple-stacked nanosheet channels, advanced epitaxial growth processes, Middle Dielectric Isolation (MDI), and validated electrical performance.